Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 700 V Enhancement, 4-Pin PG-VSON-4
- RS-stocknr.:
- 273-5350
- Fabrikantnummer:
- IPL65R230C7AUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,42
(excl. BTW)
€ 5,34
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 80 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 48 | € 2,21 | € 4,42 |
| 50 - 98 | € 1,84 | € 3,68 |
| 100 - 248 | € 1,705 | € 3,41 |
| 250 - 998 | € 1,575 | € 3,15 |
| 1000 + | € 1,54 | € 3,08 |
*prijsindicatie
- RS-stocknr.:
- 273-5350
- Fabrikantnummer:
- IPL65R230C7AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | PG-VSON-4 | |
| Series | CoolMOS C7 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.23Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 67W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC(J-STD20 andJESD22) | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type PG-VSON-4 | ||
Series CoolMOS C7 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.23Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 67W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC(J-STD20 andJESD22) | ||
Automotive Standard No | ||
The Infineon Power MOSFET constructed with CoolMOS™ revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Halogen free
Better efficiency
Pb free lead plating
High power density
Better control of the gate
Gerelateerde Links
- Infineon N-Channel MOSFET 700 V, 4-Pin PG-VSON-4 IPL65R230C7AUMA1
- Infineon N-Channel MOSFET 700 V, 4-Pin VSON IPL65R099C7AUMA1
- Infineon 650V 4A PG-VSON-4 IDL04G65C5XUMA2
- Infineon 650V 12A PG-VSON-4 IDL12G65C5XUMA2
- Infineon 650V 2A PG-VSON-4 IDL02G65C5XUMA2
- Infineon 650V 6A PG-VSON-4 IDL06G65C5XUMA2
- Infineon 650V 8A PG-VSON-4 IDL08G65C5XUMA2
- Infineon 1EDN7126GXTMA1 MOSFET Gate Driver 11V 11-Pin, PG-VSON-10
