STMicroelectronics STL N-Channel MOSFET, 120 A, 40 V Enhancement, 4-Pin ECOPACK STL260N4F7
- RS-stocknr.:
- 273-5100
- Fabrikantnummer:
- STL260N4F7
- Fabrikant:
- STMicroelectronics
Ontvang bulkkorting
Voeg 20 meer toe om 37% te besparen
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 7,08
(excl. BTW)
€ 8,56
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 150 stuk(s) vanaf 09 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 2 - 18 | € 3,54 | € 7,08 | - |
| 20 - 98 | € 2,21 | € 4,42 | 37% |
| 100 - 198 | € 1,68 | € 3,36 | 52% |
| 200 + | € 1,505 | € 3,01 | 57% |
*prijsindicatie
- RS-stocknr.:
- 273-5100
- Fabrikantnummer:
- STL260N4F7
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | ECOPACK | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type ECOPACK | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
AEC-Q101 qualified
Excellent FoM
High avalanche ruggedness
Gerelateerde Links
- STMicroelectronics STL N-Channel MOSFET 40 V Enhancement, 4-Pin ECOPACK STL260N4F7
- STMicroelectronics N-Channel STL N-Channel MOSFET 40 V Enhancement, 8-Pin PowerFLAT STL170N4LF8
- STMicroelectronics STL N-Channel MOSFET 12 V Enhancement, 8-Pin PowerFLAT STL320N4LF8
- STMicroelectronics STL N-Channel MOSFET 12 V Enhancement, 8-Pin PowerFLAT STL325N4LF8AG
- STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET 80 V N, 8-Pin PowerFLAT STL110N8F8
- STMicroelectronics Enhancement Mode STL N-Channel Power MOSFET 80 V N, 8-Pin PowerFLAT STL180N8F8
- STMicroelectronics STL N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerFLAT STL270N6LF7
- STMicroelectronics Stl N-Channel Power MOSFET 40 V Enhancement, 8-Pin PowerFLAT STL140N4LF8