Infineon IPT N-Channel MOSFET, 313 A, 60 V Enhancement, 8-Pin PG-HSOF-8 IPT012N06NATMA1
- RS-stocknr.:
- 273-5351
- Fabrikantnummer:
- IPT012N06NATMA1
- Fabrikant:
- Infineon
Subtotaal (2000 eenheden, op een rol van 2000)*
€ 3.890,00
(excl. BTW)
€ 4.706,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 14 oktober 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 1,945 | € 3.890,00 |
*prijsindicatie
- RS-stocknr.:
- 273-5351
- Fabrikantnummer:
- IPT012N06NATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC1, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon Power MOSFET is optimized for high current applications such as forklift, light electric vehicles, POL and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. It is qualified according to JEDEC1 for target applications.
Halogen free
RoHS compliant
Pb free lead plating
Superior thermal resistance
100 percent avalanche tested
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