Infineon BSR202N N-Channel MOSFET, 3.8 A, 20 V Enhancement, 3-Pin PG-SC-59
- RS-stocknr.:
- 273-7311
- Artikelnummer Distrelec:
- 304-41-650
- Fabrikantnummer:
- BSR202NL6327HTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 7,58
(excl. BTW)
€ 9,18
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Wordt opgeheven
- Laatste 475 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,303 | € 7,58 |
| 50 - 75 | € 0,297 | € 7,43 |
| 100 - 225 | € 0,278 | € 6,95 |
| 250 - 975 | € 0,257 | € 6,43 |
| 1000 + | € 0,252 | € 6,30 |
*prijsindicatie
- RS-stocknr.:
- 273-7311
- Artikelnummer Distrelec:
- 304-41-650
- Fabrikantnummer:
- BSR202NL6327HTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | BSR202N | |
| Package Type | PG-SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Forward Voltage Vf | 800mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 800μm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 900μm | |
| Length | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series BSR202N | ||
Package Type PG-SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Forward Voltage Vf 800mV | ||
Maximum Operating Temperature 150°C | ||
Height 800μm | ||
Standards/Approvals RoHS Compliant | ||
Width 900μm | ||
Length 1.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a N channel small signal MOSFET that meet and exceed the highest quality requirements in well known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
RoHS compliant
Avalanche rated
Pb free lead plating
Enhancement mode
Qualified according to AEC Q101
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