STMicroelectronics STP80N Type N-Channel MOSFET, 5 A, 800 V Enhancement, 3-Pin TO-220 STP80N1K1K6
- RS-stocknr.:
- 287-7047P
- Fabrikantnummer:
- STP80N1K1K6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 10 eenheden (geleverd in een buis)*
€ 16,35
(excl. BTW)
€ 19,78
(incl. BTW)
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Op voorraad
- Plus verzending 298 stuk(s) vanaf 26 mei 2026
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Aantal stuks | Per stuk |
|---|---|
| 10 + | € 1,635 |
*prijsindicatie
- RS-stocknr.:
- 287-7047P
- Fabrikantnummer:
- STP80N1K1K6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP80N | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP80N | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM
Ultra low gate charge
100 percent avalanche tested