Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Depletion, 4-Pin SOT-223 BSP149H6327XTSA1

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Verpakkingsopties
RS-stocknr.:
354-5720
Artikelnummer Distrelec:
302-83-878
Fabrikantnummer:
BSP149H6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

660mA

Maximum Drain Source Voltage Vds

200V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.8Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.5mm

Width

3.5 mm

Height

1.6mm

Distrelec Product Id

302-83-878

Automotive Standard

AEC-Q101

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP149H6327XTSA1


This MOSFET is an essential component designed for a range of electronic applications, offering efficient performance within a compact surface mount package. It is well-suited for controlling automation circuits and is relevant for users in the electronics, electrical, and mechanical sectors. The depletion mode characteristic enhances control for switching applications, making it a suitable choice for engineers.

Features & Benefits


• Maximum drain-source voltage of 200V for high voltage applications

• Continuous drain current capability of up to 660mA

• Utilises SIPMOS technology for consistent performance

• RoHS compliant with Pb-free lead plating

• dv/dt rated for improved resilience against voltage variations

Applications


• Driver in automation systems

• Switching power supplies for energy management

• Automotive electronics compliant with AEC-Q101 standards

What is the significance of the depletion mode characteristic?


The depletion mode allows for efficient control of the MOSFET, which enables effective switching even at lower voltages, beneficial in diverse electronic designs.

How does the device manage thermal challenges?


It functions within a broad temperature range of -55°C to +150°C, ensuring dependable performance even under extreme thermal conditions, supported by its effective thermal management capabilities.

What are the gate threshold voltage values for this component?


The gate threshold voltage ranges from -2.1V to -1V, providing versatile switching options for different circuit requirements.

What are the implications of the ESD Class rating?


The ESD Class rating of 1B indicates a design that can withstand electrostatic discharge levels between 500V and 600V, enhancing the device's reliability in sensitive applications.

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