Infineon SIPMOS® N-Channel MOSFET, 280 mA, 240 V Depletion, 3-Pin SOT-223 BSP129H6906XTSA1

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RS-stocknr.:
165-5824
Fabrikantnummer:
BSP129H6906XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

240 V

Series

SIPMOS®

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Transistor Material

Si

Typical Gate Charge @ Vgs

3.8 nC @ 5 V

Length

6.5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1.6mm

Minimum Operating Temperature

-55 °C

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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