STMicroelectronics MDmesh Type N-Channel MOSFET, 12 A, 500 V Enhancement, 3-Pin TO-220 STP12NM50
- RS-stocknr.:
- 419-2197
- Artikelnummer Distrelec:
- 171-12-832
- Fabrikantnummer:
- STP12NM50
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,21
(excl. BTW)
€ 5,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 21 stuk(s) vanaf 19 januari 2026
- Plus verzending 72 stuk(s) vanaf 19 januari 2026
- Plus verzending 1.345 stuk(s) vanaf 26 januari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 4,21 |
| 2 + | € 4,00 |
*prijsindicatie
- RS-stocknr.:
- 419-2197
- Artikelnummer Distrelec:
- 171-12-832
- Fabrikantnummer:
- STP12NM50
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | MDmesh | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Height | 9.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series MDmesh | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Height 9.15mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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