STMicroelectronics MDmesh Type N-Channel MOSFET, 45 A, 500 V Enhancement, 3-Pin TO-247 STW45NM50
- RS-stocknr.:
- 419-2440
- Fabrikantnummer:
- STW45NM50
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 12,11
(excl. BTW)
€ 14,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 54 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 30 stuk(s) vanaf 21 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 12,11 |
| 10 - 24 | € 10,94 |
| 25 - 99 | € 10,45 |
| 100 - 499 | € 8,64 |
| 500 + | € 7,63 |
*prijsindicatie
- RS-stocknr.:
- 419-2440
- Fabrikantnummer:
- STW45NM50
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | MDmesh | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 417W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series MDmesh | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 417W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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