STMicroelectronics STripFET Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-220 IRF630
- RS-stocknr.:
- 486-0171
- Fabrikantnummer:
- IRF630
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,44
(excl. BTW)
€ 9,00
(incl. BTW)
Voeg 60 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 75 stuk(s) vanaf 16 februari 2026
- Plus verzending 135 stuk(s) vanaf 16 februari 2026
- Plus verzending 350 stuk(s) vanaf 23 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,488 | € 7,44 |
| 25 - 45 | € 1,416 | € 7,08 |
| 50 - 120 | € 1,274 | € 6,37 |
| 125 - 245 | € 1,144 | € 5,72 |
| 250 + | € 1,088 | € 5,44 |
*prijsindicatie
- RS-stocknr.:
- 486-0171
- Fabrikantnummer:
- IRF630
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | STripFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.15mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series STripFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 9.15mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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