Vishay N-Channel MOSFET, 16 A, 400 V, 3-Pin TO-247AC IRFP350PBF
- RS-stocknr.:
- 540-9648
- Artikelnummer Distrelec:
- 171-16-825
- Fabrikantnummer:
- IRFP350PBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 3,96
(excl. BTW)
€ 4,79
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 533 stuk(s) vanaf 10 november 2025
- Plus verzending 71 stuk(s) vanaf 17 november 2025
- Plus verzending 500 stuk(s) vanaf 12 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,96 |
| 10 - 49 | € 3,55 |
| 50 - 99 | € 3,36 |
| 100 - 249 | € 3,24 |
| 250 + | € 2,93 |
*prijsindicatie
- RS-stocknr.:
- 540-9648
- Artikelnummer Distrelec:
- 171-16-825
- Fabrikantnummer:
- IRFP350PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 400 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 400 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 15.87mm | ||
Width 5.31mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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