Infineon HEXFET Type N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB IRLZ24NPBF

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 0,96

(excl. BTW)

€ 1,16

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Laatste voorraad RS
  • 1 stuk(s) klaar voor verzending vanaf een andere locatie
  • Laatste verzending 1 stuk(s) vanaf 07 januari 2026
Aantal stuks
Per stuk
1 - 24€ 0,96
25 - 49€ 0,85
50 - 99€ 0,79
100 - 249€ 0,73
250 +€ 0,67

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
541-1231
Fabrikantnummer:
IRLZ24NPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

8.77mm

Width

4.69 mm

Standards/Approvals

JEDEC TO-220AB, ANSI Y14.5M, 1982

Length

10.54mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF


This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.

Features & Benefits


• Supports a maximum continuous drain current of 18A for high performance

• Operates under a maximum drain-source voltage of 55V for versatile applications

• Low gate threshold voltage minimises energy loss during operation

• Exhibits low drain-source resistance for enhanced efficiency

• Features enhancement mode capability for precise switching

• Can withstand temperatures up to +175°C for functionality under harsh conditions

Applications


• Utilised for power management in industrial automation systems

• Integrated into switching power supplies for optimal performance

• Employed in motor drive circuits for improved control

• Incorporated in various consumer electronics for dependable performance

What are the recommended gate-source voltages for proper operation?


The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.

Can this component be used in high-temperature environments?


Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.

How does the low Rds(on) impact energy consumption?


A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.

What considerations should be made during installation?


Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.

Is this component compatible with standard TO-220AB packages?


Yes, its design conforms to the TO-220AB standard, facilitating easy integration into existing systems.

Gerelateerde Links