Name: Infineon HEXFET Type N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB
Brand: Infineon
SKU: 919-4895
Price: 0.84 EUR
Availability: Discontinued

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220AB
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	15nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	45W
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC TO-220AB, ANSI Y14.5M, 1982
	Length	10.54mm
	Height	8.77mm
	Width	4.69 mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220AB
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 15nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 45W
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC TO-220AB, ANSI Y14.5M, 1982
	Length 10.54mm
	Height 8.77mm
	Width 4.69 mm
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF

This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.

Features & Benefits

• Supports a maximum continuous drain current of 18A for high performance

• Operates under a maximum drain-source voltage of 55V for versatile applications

• Low gate threshold voltage minimises energy loss during operation

• Exhibits low drain-source resistance for enhanced efficiency

• Features enhancement mode capability for precise switching

• Can withstand temperatures up to +175°C for functionality under harsh conditions

Applications

• Utilised for power management in industrial automation systems

• Integrated into switching power supplies for optimal performance

• Employed in motor drive circuits for improved control

• Incorporated in various consumer electronics for dependable performance

What are the recommended gate-source voltages for proper operation?

The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.

Can this component be used in high-temperature environments?

Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.

How does the low Rds(on) impact energy consumption?

A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.

What considerations should be made during installation?

Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.

Is this component compatible with standard TO-220AB packages?

Yes, its design conforms to the TO-220AB standard, facilitating easy integration into existing systems.

Infineon HEXFET Type N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB