Infineon HEXFET Type N-Channel MOSFET, 9.4 A, 100 V Enhancement, 3-Pin IPAK

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RS-stocknr.:
541-1613
Artikelnummer Distrelec:
303-41-373
Fabrikantnummer:
IRFU120NPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

48W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.6mm

Standards/Approvals

No

Width

2.3 mm

Height

6.1mm

Distrelec Product Id

30341373

Automotive Standard

No

Infineon HEXFET Series MOSFET, 9.4A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRFU120NPBF


This N-channel MOSFET is designed for high-performance applications in the electronics and electrical sectors. With a maximum continuous drain current of 9.4A and a drain-source voltage of 100V, this device offers reliable functionality across various systems. Packaged in an IPAK TO-251 casing, the MOSFET provides a compact solution for efficient power handling.

Features & Benefits


• Designed for enhancement mode operation, offering reliable switching

• High power dissipation capability of 48W enhances performance

• Ideal for high current applications in robust electronic designs

• Single Si MOSFET configuration ensures simplified integration

Applications


• Used in power management solutions for automation systems

• Used in motor control circuits for industrial machinery

• Utilised in power converters for renewable energy systems

• Suitable for consumer electronics requiring reliable power delivery

• Integral to motor drives in electrical and mechanical

What is the significance of the low Rds(on) value?


The low Rds(on) value of 210mΩ ensures minimal on-state resistance, leading to improved efficiency and reduced heat generation during operation. This characteristic is particularly important in high-frequency applications where power loss can be substantial.

How does the MOSFET perform under extreme temperatures?


With a maximum operating temperature of +175°C and a minimum of -55°C, this device is engineered to maintain consistent performance in demanding environments. This resilience makes it suitable for a wide variety of applications where temperature fluctuations are common.

What benefits does the enhancement mode provide for circuit designers?


Enhancement mode allows the transistor to be normally off, which enhances circuit stability and prevents unwanted current flow during non-active periods. This feature provides designers with increased control over system power management.

Can this MOSFET be used in high power applications?


Yes, with a power dissipation capability of 48W and a maximum continuous drain current of 9.4A, this MOSFET is well-suited for high power applications. Its robustness ensures reliability in demanding electrical environments.

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