Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK IRFU9024NPBF

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RS-stocknr.:
541-1657
Fabrikantnummer:
IRFU9024NPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

175mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

19nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Width

2.39 mm

Height

6.22mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF


This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.

Features & Benefits


• Low Rds(on) of 175mΩ enhances energy efficiency

• Maximum power dissipation of 38W supports robust performance

• Single transistor configuration simplifies design processes

• Complies with lead-free standards for environmentally conscious applications

Applications


• Suitable for power supplies and conversion circuits

• Utilised in motor control systems for effective operation

• Integrated into battery management systems for improved performance

• Applicable in automotive environments for dependable power handling

• Ideal for industrial automation equipment requiring robust performance

What is the temperature range for stable operation?


The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.

How can it handle high power loads efficiently?


With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.

Is it compatible with a standard PCB layout?


Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.

What criteria should be considered for gate voltage?


A gate-source voltage range of -20V to +20V provides flexibility; optimum performance is achieved at 10V for effective operation.

How does it contribute to efficiency in power management?


Its low on-resistance and high current capability maximise efficiency in various power management scenarios.

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