Infineon HEXFET Type N-Channel MOSFET, 17 A, 55 V Enhancement, 3-Pin IPAK IRLU024NPBF

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Verpakkingsopties
RS-stocknr.:
543-0591
Fabrikantnummer:
IRLU024NPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

45W

Typical Gate Charge Qg @ Vgs

15nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Width

2.39 mm

Height

6.22mm

Automotive Standard

No

Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 55V Maximum Drain Source Voltage - IRLU024NPBF


This MOSFET is a high-performance power device designed specifically for demanding applications within the electrical and mechanical industries. It features an enhancement mode configuration and operates effectively within a temperature range of -55°C to +175°C. With compact dimensions of 6.73mm in length, 2.39mm in width, and 6.22mm in height, it can be easily integrated into various electronic setups.

Features & Benefits


• Achieves a maximum continuous drain current of 17A

• Offers a maximum drain-source voltage of 55V

• Supports a maximum power dissipation of 45W

• Rugged design suitable for high-temperature applications

• Compatible with through-hole mounting for versatile installation

Applications


• Used in motor control systems for precise regulation

• Suitable for switch-mode power supplies for efficient energy conversion

• Effective in industrial automation equipment for reliable performance

• Utilised in consumer electronics for improved power management

• Ideal for power management circuits requiring high current

What is the significance of the on-resistance in this device?


The low Rds(on) of 65mΩ ensures minimal energy loss during operation, enhancing the overall efficiency of circuits designed using this specific device. This characteristic also supports the capacity for higher current without overheating issues in electronic applications.

How does this MOSFET perform in high-temperature environments?


This device is engineered to function reliably in temperatures ranging from -55°C to +175°C, making it suitable for environments that experience significant thermal stress, such as industrial machinery and automotive applications.

Can it handle pulsed drain currents?


Yes, the device supports pulsed drain currents up to 72A, providing flexibility in various dynamic switching applications where short bursts of high current are necessary.

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