Vishay IRFI Type P-Channel MOSFET, 2 A, 200 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 543-2193
- Fabrikantnummer:
- IRFI9610GPBF
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,93
(excl. BTW)
€ 14,435
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 15 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 65 stuk(s) vanaf 06 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,386 | € 11,93 |
| 50 - 245 | € 2,242 | € 11,21 |
| 250 - 495 | € 2,03 | € 10,15 |
| 500 - 1245 | € 1,908 | € 9,54 |
| 1250 + | € 1,79 | € 8,95 |
*prijsindicatie
- RS-stocknr.:
- 543-2193
- Fabrikantnummer:
- IRFI9610GPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | IRFI | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 27W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -5.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.63mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Height | 9.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series IRFI | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 27W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -5.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.63mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Height 9.8mm | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
Dynamic dV/dt rating
Low thermal resistance
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