DiodesZetex ZXMN10A07Z Type N-Channel MOSFET, 1.4 A, 100 V Enhancement, 3-Pin SOT-89 ZXMN10A07ZTA
- RS-stocknr.:
- 669-7401
- Fabrikantnummer:
- ZXMN10A07ZTA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 6,06
(excl. BTW)
€ 7,33
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 10 stuk(s) vanaf 19 juni 2026
- Plus verzending 160 stuk(s) vanaf 26 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,606 | € 6,06 |
| 50 - 240 | € 0,546 | € 5,46 |
| 250 + | € 0,526 | € 5,26 |
*prijsindicatie
- RS-stocknr.:
- 669-7401
- Fabrikantnummer:
- ZXMN10A07ZTA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ZXMN10A07Z | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.6W | |
| Forward Voltage Vf | 0.95V | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Standards/Approvals | No | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ZXMN10A07Z | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.6W | ||
Forward Voltage Vf 0.95V | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Standards/Approvals No | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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