onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 6.9 A, 30 V Enhancement, 8-Pin SOIC FDS4935BZ
- RS-stocknr.:
- 671-0536
- Fabrikantnummer:
- FDS4935BZ
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 6,80
(excl. BTW)
€ 8,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 14.475 stuk(s) vanaf 01 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,36 | € 6,80 |
| 25 - 95 | € 0,946 | € 4,73 |
| 100 - 245 | € 0,624 | € 3,12 |
| 250 - 495 | € 0,568 | € 2,84 |
| 500 + | € 0,52 | € 2,60 |
*prijsindicatie
- RS-stocknr.:
- 671-0536
- Fabrikantnummer:
- FDS4935BZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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