onsemi PowerTrench N-Channel MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC FDS8884
- RS-stocknr.:
- 671-0722
- Fabrikantnummer:
- FDS8884
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 4,26
(excl. BTW)
€ 5,15
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Plus verzending 10 stuk(s) vanaf 02 november 2026
- Laatste verzending 2.700 stuk(s) vanaf 09 november 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,426 | € 4,26 |
| 100 - 240 | € 0,367 | € 3,67 |
| 250 - 490 | € 0,318 | € 3,18 |
| 500 - 990 | € 0,28 | € 2,80 |
| 1000 + | € 0,256 | € 2,56 |
*prijsindicatie
- RS-stocknr.:
- 671-0722
- Fabrikantnummer:
- FDS8884
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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