onsemi QFET Type P-Channel MOSFET, 22 A, 100 V Enhancement, 3-Pin TO-263 FQB22P10TM
- RS-stocknr.:
- 671-0879
- Fabrikantnummer:
- FQB22P10TM
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,54
(excl. BTW)
€ 15,175
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tekort aan aanbod
- Plus verzending 25 stuk(s) vanaf 29 december 2025
- Plus verzending 1.200 stuk(s) vanaf 05 januari 2026
Onze huidige voorraad is beperkt en onze leveranciers verwachten tekorten.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,508 | € 12,54 |
| 50 - 95 | € 2,162 | € 10,81 |
| 100 - 495 | € 1,874 | € 9,37 |
| 500 + | € 1,646 | € 8,23 |
*prijsindicatie
- RS-stocknr.:
- 671-0879
- Fabrikantnummer:
- FQB22P10TM
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 3.75W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -4V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 3.75W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -4V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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