onsemi QFET Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 FQD17P06TM
- RS-stocknr.:
- 671-0968
- Artikelnummer Distrelec:
- 304-43-729
- Fabrikantnummer:
- FQD17P06TM
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,71
(excl. BTW)
€ 8,12
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
- 5 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 7.310 stuk(s) vanaf 15 oktober 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,342 | € 6,71 |
| 50 - 95 | € 1,156 | € 5,78 |
| 100 - 495 | € 1,004 | € 5,02 |
| 500 - 995 | € 0,884 | € 4,42 |
| 1000 + | € 0,804 | € 4,02 |
*prijsindicatie
- RS-stocknr.:
- 671-0968
- Artikelnummer Distrelec:
- 304-43-729
- Fabrikantnummer:
- FQD17P06TM
- Fabrikant:
- onsemi
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | QFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | -4V | |
| Maximum Gate Source Voltage Vgs | -25V, +25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series QFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf -4V | ||
Maximum Gate Source Voltage Vgs -25V, +25V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
Features and Benefits:
Applications:
MOSFET Transistors, ON Semi
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