onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

RS-stocknr.:: 671-0949
Fabrikantnummer:: FQD11P06TM
Fabrikant:: onsemi

onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252 FQD11P06TM

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 7,42

(excl. BTW)

€ 8,98

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 185 stuk(s) vanaf 29 december 2025
Plus verzending 1.405 stuk(s) vanaf 05 januari 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 1,484	€ 7,42
50 - 95	€ 1,28	€ 6,40
100 - 495	€ 1,108	€ 5,54
500 - 995	€ 0,974	€ 4,87
1000 +	€ 0,886	€ 4,43

*prijsindicatie

RS-stocknr.:: 671-0949
Fabrikantnummer:: FQD11P06TM
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.4A
	Maximum Drain Source Voltage Vds	60V
	Series	QFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	185mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	13nC
	Forward Voltage Vf	-4V
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Length	6.6mm
	Standards/Approvals	No
	Width	6.1 mm
	Height	2.3mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.4A
	Maximum Drain Source Voltage Vds 60V
	Series QFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 185mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 13nC
	Forward Voltage Vf -4V
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Length 6.6mm
	Standards/Approvals No
	Width 6.1 mm
	Height 2.3mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.