onsemi QFET Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF

RS-stocknr.:: 671-1062
Fabrikantnummer:: FQT7N10LTF
Fabrikant:: onsemi

onsemi QFET Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF

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Subtotaal (1 verpakking van 5 eenheden)*

€ 4,21

(excl. BTW)

€ 5,095

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Laatste voorraad RS

50 stuk(s) klaar voor verzending vanaf een andere locatie
Laatste verzending 2.510 stuk(s) vanaf 01 september 2026

Aantal stuks	Per stuk	Per verpakking*
5 - 45	€ 0,842	€ 4,21
50 - 95	€ 0,724	€ 3,62
100 - 495	€ 0,632	€ 3,16
500 - 995	€ 0,552	€ 2,76
1000 +	€ 0,504	€ 2,52

*prijsindicatie

RS-stocknr.:: 671-1062
Fabrikantnummer:: FQT7N10LTF
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.7A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-223
	Series	QFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	350mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.6nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.5V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	150°C
	Height	1.6mm
	Width	3.56mm
	Standards/Approvals	No
	Length	6.5mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.7A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-223
	Series QFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 350mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.6nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.5V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 150°C
	Height 1.6mm
	Width 3.56mm
	Standards/Approvals No
	Length 6.5mm
	Automotive Standard No

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi QFET Type N-Channel MOSFET, 1.7 A, 100 V Enhancement, 4-Pin SOT-223 FQT7N10LTF

GRATIS bezorging voor bestellingen van meer dan € 90,00

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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