onsemi NDS7002A Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 NDS7002A
- RS-stocknr.:
- 671-1093
- Fabrikantnummer:
- NDS7002A
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 1,50
(excl. BTW)
€ 1,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 40 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 48.260 stuk(s) vanaf 01 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,15 | € 1,50 |
| 100 - 240 | € 0,13 | € 1,30 |
| 250 - 490 | € 0,113 | € 1,13 |
| 500 - 990 | € 0,098 | € 0,98 |
| 1000 + | € 0,089 | € 0,89 |
*prijsindicatie
- RS-stocknr.:
- 671-1093
- Fabrikantnummer:
- NDS7002A
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NDS7002A | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300mW | |
| Forward Voltage Vf | 0.88V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.93mm | |
| Width | 1.3mm | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NDS7002A | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300mW | ||
Forward Voltage Vf 0.88V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.93mm | ||
Width 1.3mm | ||
Length 2.92mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi NDS7002A Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Microchip TN2106 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi Isolated 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-563
- Microchip TN2106 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 TN2106K1-G
- onsemi Isolated 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SOT-563 2N7002V
- onsemi Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi 2N7002 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- onsemi 2N7002KW Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23