onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92 2N7000
- RS-stocknr.:
- 671-4733
- Artikelnummer Distrelec:
- 304-43-722
- Fabrikantnummer:
- 2N7000
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 10,10
(excl. BTW)
€ 12,22
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 160 stuk(s) klaar voor verzending
- 5.160 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,505 | € 10,10 |
| 200 - 480 | € 0,454 | € 9,08 |
| 500 + | € 0,404 | € 8,08 |
*prijsindicatie
- RS-stocknr.:
- 671-4733
- Artikelnummer Distrelec:
- 304-43-722
- Fabrikantnummer:
- 2N7000
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | 2N7000 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Forward Voltage Vf | 0.88V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.19mm | |
| Length | 5.2mm | |
| Standards/Approvals | No | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series 2N7000 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Forward Voltage Vf 0.88V | ||
Maximum Operating Temperature 150°C | ||
Width 4.19mm | ||
Length 5.2mm | ||
Standards/Approvals No | ||
Height 5.33mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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