Microchip 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92

RS-stocknr.:: 177-9588
Fabrikantnummer:: 2N7000-G
Fabrikant:: Microchip

Microchip 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92

Subtotaal (1 zak van 1000 eenheden)*

€ 324,00

(excl. BTW)

€ 392,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 3.000 stuk(s) vanaf 29 december 2025

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Aantal stuks	Per stuk	Per Zak*
1000 +	€ 0,324	€ 324,00

*prijsindicatie

RS-stocknr.:: 177-9588
Fabrikantnummer:: 2N7000-G
Fabrikant:: Microchip

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Microchip
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	200mA
	Maximum Drain Source Voltage Vds	60V
	Series	2N7000
	Package Type	TO-92
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.3Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	0.85V
	Maximum Power Dissipation Pd	1W
	Maximum Operating Temperature	150°C
	Height	5.33mm
	Width	4.06 mm
	Standards/Approvals	No
	Length	5.08mm
	Automotive Standard	No

	Alles selecteren
	Merk Microchip
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 200mA
	Maximum Drain Source Voltage Vds 60V
	Series 2N7000
	Package Type TO-92
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.3Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 0.85V
	Maximum Power Dissipation Pd 1W
	Maximum Operating Temperature 150°C
	Height 5.33mm
	Width 4.06 mm
	Standards/Approvals No
	Length 5.08mm
	Automotive Standard No

Datasheet

Land van herkomst:: TW

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has drain-source resistance of 5ohms at a gate-source voltage of 10V. It has continuous drain current of 200mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET is an enhancement mode (normally off) MOSFET that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC