onsemi QFET Type N-Channel MOSFET, 23 A, 600 V Enhancement, 3-Pin TO-3PN FQA24N60

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RS-stocknr.:
671-4929
Fabrikantnummer:
FQA24N60
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-3PN

Series

QFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

310W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

110nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

18.9mm

Length

15.8mm

Width

5 mm

Automotive Standard

No

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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