onsemi QFET Type N-Channel MOSFET, 8 A, 1 kV Enhancement, 3-Pin TO-3PN FQA8N100C

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Verpakkingsopties
RS-stocknr.:
671-4972
Fabrikantnummer:
FQA8N100C
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-3PN

Series

QFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.45Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

225W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

53nC

Maximum Operating Temperature

150°C

Height

18.9mm

Length

15.8mm

Standards/Approvals

No

Width

5 mm

Automotive Standard

No

Land van herkomst:
MY

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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