onsemi Single QFET 1 N-Channel MOSFET, 43 A, 100 V Enhancement, 3-Pin TO-220AB FQP44N10
- RS-stocknr.:
- 671-5111
- Fabrikantnummer:
- FQP44N10
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 671-5111
- Fabrikantnummer:
- FQP44N10
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Transistor Configuration | Single | |
| Series | QFET | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 43 A | |
| Maximum Drain Source Voltage (Vds) | 100 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220AB | |
| Height | 9.4 mm | |
| Length | 10.1 mm | |
| Maximum Drain Source Resistance (Rds) | 39 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 25 V, -25 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 146 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole | |
| Width | 4.7 mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Transistor Configuration Single | ||
Series QFET | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 43 A | ||
Maximum Drain Source Voltage (Vds) 100 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220AB | ||
Height 9.4 mm | ||
Length 10.1 mm | ||
Maximum Drain Source Resistance (Rds) 39 mΩ | ||
Maximum Gate Source Voltage (Vgs) 25 V, -25 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 146 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole | ||
Width 4.7 mm | ||
- Land van herkomst:
- MY
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi Single QFET 1 MOSFET 100 V Enhancement, 3-Pin TO-220AB FQP17P10
- onsemi Single QFET 1 N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220AB FQP6N40C
- onsemi Single QFET 1 N-Channel MOSFET 300 V Enhancement, 3-Pin TO-3PN FQA44N30
- onsemi QFET N-Channel MOSFET 300 V Enhancement, 3-Pin TO-220AB FQP22N30
- onsemi QFET Type P-Channel P-Channel QFET MOSFET 500 V Enhancement, 3-Pin TO-220AB FQP3P50
- onsemi QFET N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB FQP30N06
- onsemi Single QFET 1 N-Channel MOSFET 100 V Enhancement, 3-Pin IPAK FQU13N10LTU
- onsemi QFET N-Channel MOSFET 400 V, 3-Pin TO-220AB FQP17N40