onsemi QFET N-Channel MOSFET, 5.5 A, 800 V, 3-Pin TO-220F FQPF6N80C
- RS-stocknr.:
- 671-5290
- Fabrikantnummer:
- FQPF6N80C
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 8,41
(excl. BTW)
€ 10,175
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,682 | € 8,41 |
| 50 - 95 | € 1,45 | € 7,25 |
| 100 - 495 | € 1,258 | € 6,29 |
| 500 - 995 | € 1,104 | € 5,52 |
| 1000 + | € 1,004 | € 5,02 |
*prijsindicatie
- RS-stocknr.:
- 671-5290
- Fabrikantnummer:
- FQPF6N80C
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.5 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | QFET | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 51 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Width | 4.7mm | |
| Length | 10.16mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.19mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.5 A | ||
Maximum Drain Source Voltage 800 V | ||
Series QFET | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 51 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V | ||
Width 4.7mm | ||
Length 10.16mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.19mm | ||
- Land van herkomst:
- MY
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