onsemi Type P-Channel MOSFET, 2.4 A, 20 V Enhancement, 3-Pin SOT-23 NTR4101PT1G
- RS-stocknr.:
- 688-9152
- Fabrikantnummer:
- NTR4101PT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 0,62
(excl. BTW)
€ 0,76
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 16 stuk(s) vanaf 29 december 2025
- Plus verzending 252 stuk(s) vanaf 29 december 2025
- Plus verzending 8.714 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 0,31 | € 0,62 |
| 20 - 198 | € 0,27 | € 0,54 |
| 200 - 998 | € 0,235 | € 0,47 |
| 1000 - 1998 | € 0,205 | € 0,41 |
| 2000 + | € 0,185 | € 0,37 |
*prijsindicatie
- RS-stocknr.:
- 688-9152
- Fabrikantnummer:
- NTR4101PT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 730mW | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 0.94mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 730mW | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 0.94mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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