onsemi Type N-Channel MOSFET, 2.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS-stocknr.:
- 184-1067
- Fabrikantnummer:
- NTR4170NT1G
- Fabrikant:
- onsemi
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- RS-stocknr.:
- 184-1067
- Fabrikantnummer:
- NTR4170NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 480mW | |
| Typical Gate Charge Qg @ Vgs | 4.76nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.01mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 480mW | ||
Typical Gate Charge Qg @ Vgs 4.76nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.01mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
This is a 30 V N-Channel Power MOSFET.
Low rDS(on) to Minimize Conduction Loss
Low Gate Charge
Low Threshold Levels
Applications:
Power Converters for Portables
Battery Management
Load/Power Switch
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