DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 4.8 A, 60 V Enhancement, 8-Pin SOIC ZXMP6A18DN8TA
- RS-stocknr.:
- 708-2554
- Fabrikantnummer:
- ZXMP6A18DN8TA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 9,41
(excl. BTW)
€ 11,39
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 1.435 stuk(s) vanaf 02 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,882 | € 9,41 |
| 25 - 120 | € 1,496 | € 7,48 |
| 125 - 245 | € 1,182 | € 5,91 |
| 250 + | € 1,144 | € 5,72 |
*prijsindicatie
- RS-stocknr.:
- 708-2554
- Fabrikantnummer:
- ZXMP6A18DN8TA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.85V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020 | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.85V | ||
Maximum Power Dissipation Pd 2.1W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020 | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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