Vishay Si4134DY Type N-Channel MOSFET, 14 A, 30 V Enhancement, 8-Pin SOIC Si4134DY-T1-GE3
- RS-stocknr.:
- 710-3320
- Fabrikantnummer:
- Si4134DY-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 6,61
(excl. BTW)
€ 8,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 4.050 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,661 | € 6,61 |
| 100 - 240 | € 0,622 | € 6,22 |
| 250 - 490 | € 0,562 | € 5,62 |
| 500 - 990 | € 0,53 | € 5,30 |
| 1000 + | € 0,496 | € 4,96 |
*prijsindicatie
- RS-stocknr.:
- 710-3320
- Fabrikantnummer:
- Si4134DY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4134DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Length | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4134DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Length 5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
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