Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- RS-stocknr.:
- 710-3386
- Fabrikantnummer:
- SI7309DN-T1-E3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,08
(excl. BTW)
€ 8,565
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 8.720 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,416 | € 7,08 |
| 50 - 245 | € 0,988 | € 4,94 |
| 250 - 495 | € 0,876 | € 4,38 |
| 500 - 1245 | € 0,74 | € 3,70 |
| 1250 + | € 0,668 | € 3,34 |
*prijsindicatie
- RS-stocknr.:
- 710-3386
- Fabrikantnummer:
- SI7309DN-T1-E3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Si7309DN | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 19.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.04mm | |
| Length | 3.05mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Si7309DN | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 19.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.04mm | ||
Length 3.05mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
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