Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML0030TRPBF

RS-stocknr.:: 725-9344
Artikelnummer Distrelec:: 304-45-309
Fabrikantnummer:: IRLML0030TRPBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5.3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML0030TRPBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 20 eenheden)*

€ 6,74

(excl. BTW)

€ 8,16

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

140 stuk(s) klaar voor verzending
540 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 10.020 stuk(s) vanaf 01 september 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
20 - 180	€ 0,337	€ 6,74
200 - 480	€ 0,24	€ 4,80
500 - 980	€ 0,222	€ 4,44
1000 - 1980	€ 0,208	€ 4,16
2000 +	€ 0,193	€ 3,86

*prijsindicatie

RS-stocknr.:: 725-9344
Artikelnummer Distrelec:: 304-45-309
Fabrikantnummer:: IRLML0030TRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.3A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	2.6nC
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	1.02mm
	Length	3.04mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.3A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 2.6nC
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 1.02mm
	Length 3.04mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 27mΩ Maximum Drain Source Resistance - IRLML0030TRPBF

This MOSFET is a compact N-channel switching transistor designed for surface-mount power control in compact electronic assemblies. It operates as an enhancement-mode device suitable for low-voltage switching and power-management tasks across a wide temperature span, enabling reliable performance in demanding thermal environments.

Features and Benefits:

• Low on-resistance gives efficient conduction and reduced losses
• 30V drain-source rating permits safe low-voltage switching
• 5.3A continuous drain current supports moderate load currents
• Typical gate charge 2.6nC enables fast, low-energy switching
• Maximum power dissipation 1.3W allows small-signal power handling
• Gate-source tolerance ±20V offers robust drive margin

Applications

• Suitable for battery-powered DC load switching
• Ideal for point-of-load converters in compact electronics
• Used for motor driver stages with modest currents
• Can be used for protection and load-disconnect circuits
• Used with logic-level gate drivers in control boards

What thermal range can it withstand in harsh environments?

It is specified to operate from -55°C up to 150°C, covering typical industrial and extended-temperature use cases.

What package and mounting method does it require for assembly?

It is supplied in an SOT-23 package and is intended for surface-mount assembly processes.

How does its gate-charge value affect drive requirements?

A gate charge of 2.6nC reduces energy needed per switching transition, lowering driver current and switching losses in high-frequency applications.

What are the electrical limits for safe operation of the channel?

The device’s maximum drain-source voltage is 30V and the maximum drain-source resistance is 27mΩ, defining its voltage tolerance and conduction efficiency.