Infineon HEXFET Type N-Channel MOSFET, 1.2 A, 60 V Enhancement, 3-Pin SOT-23 IRLML2060TRPBF
- RS-stocknr.:
- 725-9357
- Fabrikantnummer:
- IRLML2060TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 4,58
(excl. BTW)
€ 5,54
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 320 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 29.040 stuk(s) vanaf 06 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 180 | € 0,229 | € 4,58 |
| 200 - 480 | € 0,157 | € 3,14 |
| 500 - 980 | € 0,149 | € 2,98 |
| 1000 - 1980 | € 0,137 | € 2,74 |
| 2000 + | € 0,128 | € 2,56 |
*prijsindicatie
- RS-stocknr.:
- 725-9357
- Fabrikantnummer:
- IRLML2060TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.67nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-45-313 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.67nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-45-313 | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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