Infineon HEXFET Type N-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 IRLML6344TRPBF

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 5,40

(excl. BTW)

€ 6,60

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 480 stuk(s) vanaf 29 december 2025
  • Plus verzending 3.160 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
20 - 180€ 0,27€ 5,40
200 - 480€ 0,184€ 3,68
500 - 980€ 0,173€ 3,46
1000 - 1980€ 0,162€ 3,24
2000 +€ 0,149€ 2,98

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
737-7225
Fabrikantnummer:
IRLML6344TRPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

37mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.3W

Typical Gate Charge Qg @ Vgs

6.8nC

Maximum Gate Source Voltage Vgs

12 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

1.02mm

Length

3.04mm

Standards/Approvals

No

Width

1.4 mm

Automotive Standard

No

Distrelec Product Id

304-45-318

Infineon HEXFET Series MOSFET, 5A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML6344TRPBF


This MOSFET is a high-performance N-channel surface mount device suitable for various applications in the electronics and automation sectors. Designed with a compact SOT-23 package, it measures 3.04mm in length, 1.4mm in width, and 1.02mm in height. It exhibits excellent thermal performance, with an operating temperature range of -55°C to +150°C.

Features & Benefits


• Offers a continuous drain current of 5A for robust performance

• Maximum drain-source voltage of 30V supports various requirements

• Low RDS(on) of 29mΩ at VGS = 4.5V reduces power losses

• Wide gate threshold voltage range enables flexible operation

• Efficient power dissipation capability of 1.3W enhances reliability

Applications


• Ideal for microcontroller load switching in electronic systems

• Used in power management solutions for automotive

• Effective in DC-DC converters for efficient energy conversion

• Suitable for battery management systems to improve performance

• Effective in motor control circuits for automation tasks

What is the significance of the low RDS(on) value?


The low RDS(on) value indicates lower conduction losses, which translates to better efficiency, especially in high-current applications. This characteristic is essential for reducing heat generation in power electronics.

What voltage range can be applied to the gate-source junction?


The maximum gate-source voltage is ±12V, allowing flexibility in driving conditions while ensuring device integrity within rated limits.

How does the device perform under high temperatures?


With a maximum operating temperature of +150°C, the MOSFET is built to withstand harsh environments, ensuring reliable functionality in demanding applications.

What benefits does the surface mount design provide?


The SOT-23 surface mount design allows for compact circuit layouts and enhances thermal management, making it ideal for modern electronic assemblies.

Gerelateerde Links