DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 840 mA, 20 V Enhancement, 6-Pin SC-88 DMG1016UDW-7
- RS-stocknr.:
- 751-4089
- Fabrikantnummer:
- DMG1016UDW-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 rol van 50 eenheden)*
€ 2,65
(excl. BTW)
€ 3,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 900 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 100.750 stuk(s) vanaf 05 januari 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 50 - 550 | € 0,053 | € 2,65 |
| 600 - 1450 | € 0,051 | € 2,55 |
| 1500 + | € 0,05 | € 2,50 |
*prijsindicatie
- RS-stocknr.:
- 751-4089
- Fabrikantnummer:
- DMG1016UDW-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 840mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 736.6nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 330mW | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | -6/6 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 840mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 736.6nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 330mW | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs -6/6 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | ||
Height 1mm | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
- Land van herkomst:
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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