DiodesZetex ZVN4525G Type N-Channel MOSFET, 310 mA, 250 V Enhancement, 4-Pin SOT-223 ZVN4525GTA
- RS-stocknr.:
- 751-5269
- Fabrikantnummer:
- ZVN4525GTA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 7,61
(excl. BTW)
€ 9,21
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,761 | € 7,61 |
| 50 - 240 | € 0,584 | € 5,84 |
| 250 - 490 | € 0,461 | € 4,61 |
| 500 + | € 0,438 | € 4,38 |
*prijsindicatie
- RS-stocknr.:
- 751-5269
- Fabrikantnummer:
- ZVN4525GTA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 310mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-223 | |
| Series | ZVN4525G | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 9.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.7mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 310mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-223 | ||
Series ZVN4525G | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 9.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.7mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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