Infineon CoolMOS C3 Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-220 SPA11N60C3XKSA1
- RS-stocknr.:
- 752-8467
- Fabrikantnummer:
- SPA11N60C3XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 6,12
(excl. BTW)
€ 7,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 44 stuk(s) vanaf 29 december 2025
- Plus verzending 10 stuk(s) vanaf 05 januari 2026
- Plus verzending 500 stuk(s) vanaf 16 juli 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,06 | € 6,12 |
| 20 - 48 | € 2,725 | € 5,45 |
| 50 - 98 | € 2,54 | € 5,08 |
| 100 - 198 | € 2,385 | € 4,77 |
| 200 + | € 2,205 | € 4,41 |
*prijsindicatie
- RS-stocknr.:
- 752-8467
- Fabrikantnummer:
- SPA11N60C3XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Height | 9.83mm | |
| Width | 4.85 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Height 9.83mm | ||
Width 4.85 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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