Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-263 IPB200N15N3GATMA1

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RS-stocknr.:
754-5443
Fabrikantnummer:
IPB200N15N3GATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.45 mm

Length

10.31mm

Height

4.57mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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