onsemi UniFET N-Channel MOSFET, 15 A, 500 V, 3-Pin D2PAK FDB15N50
- RS-stocknr.:
- 759-8958
- Fabrikantnummer:
- FDB15N50
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 3,08
(excl. BTW)
€ 3,73
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- 780 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,08 |
| 10 - 99 | € 2,65 |
| 100 - 499 | € 2,30 |
| 500 + | € 2,02 |
*prijsindicatie
- RS-stocknr.:
- 759-8958
- Fabrikantnummer:
- FDB15N50
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | UniFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 11.33mm | |
| Transistor Material | Si | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 500 V | ||
Series UniFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 11.33mm | ||
Transistor Material Si | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- Land van herkomst:
- CN
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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