onsemi UniFET Type N-Channel MOSFET, 52 A, 200 V Enhancement, 3-Pin TO-263 FDB52N20TM
- RS-stocknr.:
- 759-8983
- Fabrikantnummer:
- FDB52N20TM
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,20
(excl. BTW)
€ 12,35
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,04 | € 10,20 |
| 50 - 95 | € 1,76 | € 8,80 |
| 100 - 495 | € 1,524 | € 7,62 |
| 500 + | € 1,34 | € 6,70 |
*prijsindicatie
- RS-stocknr.:
- 759-8983
- Fabrikantnummer:
- FDB52N20TM
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | UniFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 357W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.572mm | |
| Standards/Approvals | No | |
| Length | 9.98mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series UniFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 357W | ||
Maximum Operating Temperature 150°C | ||
Height 4.572mm | ||
Standards/Approvals No | ||
Length 9.98mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Gerelateerde Links
- onsemi UniFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 FDB44N25TM
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263 FDB15N50
- onsemi UniFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 FDB33N25TM