STMicroelectronics MDmesh N-Channel MOSFET Transistor, 11 A, 800 V, 3-Pin D2PAK STB11NM80T4

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RS-stocknr.:
760-9477
Fabrikantnummer:
STB11NM80T4
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Package Type

TO-263

Series

MDmesh

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

150 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

10.4mm

Typical Gate Charge @ Vgs

43.6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

10.75mm

Height

4.6mm

Minimum Operating Temperature

-65 °C

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

Low input capacitance and gate charge

Low gate input resistance

Best RDS(on)Qg in the industry

Applications

Switching applications

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