STMicroelectronics MDmesh Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin TO-220 STF10NM60N
- RS-stocknr.:
- 761-2739
- Fabrikantnummer:
- STF10NM60N
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 15,96
(excl. BTW)
€ 19,31
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 75 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 340 stuk(s) vanaf 10 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,192 | € 15,96 |
| 25 - 45 | € 3,034 | € 15,17 |
| 50 - 120 | € 2,728 | € 13,64 |
| 125 - 245 | € 2,458 | € 12,29 |
| 250 + | € 2,33 | € 11,65 |
*prijsindicatie
- RS-stocknr.:
- 761-2739
- Fabrikantnummer:
- STF10NM60N
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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