onsemi Series PowerTrench 2 Type N-Channel MOSFET, 26 A, 30 V Enhancement, 8-Pin WDFN FDPC8013S

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€ 4,78

(excl. BTW)

€ 5,78

(incl. BTW)

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2 - 18€ 2,39€ 4,78
20 - 198€ 2,06€ 4,12
200 - 998€ 1,78€ 3,56
1000 - 1998€ 1,565€ 3,13
2000 +€ 1,43€ 2,86

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Verpakkingsopties
RS-stocknr.:
774-1180
Fabrikantnummer:
FDPC8013S
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

WDFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Transistor Configuration

Series

Height

0.75mm

Length

3.4mm

Width

3.4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Land van herkomst:
MY

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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