onsemi Isolated 2 Type N-Channel Small Signal, 250 mA, 30 V Enhancement, 6-Pin SC-88 NTJD4001NT1G
- RS-stocknr.:
- 780-0608
- Fabrikantnummer:
- NTJD4001NT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 50 eenheden)*
€ 12,65
(excl. BTW)
€ 15,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 50 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 19.000 stuk(s) vanaf 11 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 550 | € 0,253 | € 12,65 |
| 600 - 1450 | € 0,153 | € 7,65 |
| 1500 + | € 0,117 | € 5,85 |
*prijsindicatie
- RS-stocknr.:
- 780-0608
- Fabrikantnummer:
- NTJD4001NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Small Signal | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.72W | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.65V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Small Signal | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.72W | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.65V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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