Name: Infineon HEXFET N-Channel MOSFET, 38 A, 300 V, 3-Pin TO-247AC IRFP4137PBF
Brand: Infineon
SKU: 784-8944
Price: 7.21 EUR
Availability: OutOfStock

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	38 A
	Maximum Drain Source Voltage	300 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	69 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	341 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	5.2mm
	Typical Gate Charge @ Vgs	83 nC @ 10 V
	Length	16.13mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Forward Diode Voltage	1.3V
	Height	21.1mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk Infineon
	Channel Type N
	Maximum Continuous Drain Current 38 A
	Maximum Drain Source Voltage 300 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 69 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 341 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 5.2mm
	Typical Gate Charge @ Vgs 83 nC @ 10 V
	Length 16.13mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Forward Diode Voltage 1.3V
	Height 21.1mm
	Minimum Operating Temperature -55 °C

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 38A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP4137PBF

This N-channel MOSFET is designed for high power applications, handling continuous drain currents up to 38A while accommodating a maximum drain-source voltage of 300V. Its enhancement mode configuration provides enhanced efficiency and performance in electronic circuits, making it a key component for various industrial uses. The MOSFET is robust and ensures dependable operation in challenging conditions.

Features & Benefits

• High efficiency synchronous rectification contributes to energy savings
• Improved gate, avalanche, and dynamic ruggedness enhance durability
• Low Rds(on) rating minimises power loss during operation
• Thermal performance withstands temperatures up to +175°C

Applications

• Utilised for synchronous rectification in switched-mode power supplies
• Suitable for hard switching and high-frequency circuit designs
• Employed in uninterruptible power supply systems for enhanced reliability

What is the maximum gate-source voltage allowable for safe operation?

The device can safely handle a maximum gate-source voltage of ±20V, ensuring compatibility in various applications.

How can this device be effectively cooled in high power applications?

Effective cooling can be achieved by applying a suitable heat sink and ensuring proper airflow to maintain junction temperatures within 175°C during operation.

What kind of circuit configurations can this MOSFET support?

It is suitable for single transistor configurations, enabling integration into diverse circuit designs with high efficiency.

What happens to the performance at higher temperatures?

At elevated temperatures, the continuous drain current rating decreases

at 100°C, it is rated for 27A compared to 38A at 25°C.

Infineon HEXFET N-Channel MOSFET, 38 A, 300 V, 3-Pin TO-247AC IRFP4137PBF